TK1P90A - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK1P90A
Manufacturer	Toshiba ↗ Semiconductor
File Size	246.83 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK1P90A-ToshibaSemiconductor.pdf

(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ. ) High forward transfer admittance: |Yfs| = 1.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) (Heatsink) 3: Source (S) New PW-Mold 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cur.

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Published: Sep 5, 2014 |