TK1P90A Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

TK1P90A MOSFETs Silicon N-Channel MOS (π-MOS) TK1P90A 1.Applications * Switching Voltage Regulators 2..

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Datasheet Specifications

Part number: TK1P90A
Manufacturer: Toshiba ↗ Semiconductor
File Size: 246.83 KB
Datasheet: TK1P90A-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ. ) High forward transfer admittance: |Yfs| = 1.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (

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TK1P90A Silicon N-Channel MOSFET Toshiba Semiconductor

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