TK12V60W - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK12V60W
Manufacturer	Toshiba ↗ Semiconductor
File Size	261.71 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK12V60W-ToshibaSemiconductor.pdf

(1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12V60W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise.

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Published: Sep 6, 2014 |