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TK12A55D N-Channel MOSFET

TK12A55D Description

TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK12A55D Switching Regulator Applications * Low drain-source .

TK12A55D Applications

* Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ. )
* High forward transfer admittance: |Yfs| = 6.0 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 A Unit: mm

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N-Channel MOSFET Toshiba Semiconductor
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