TK10X40D - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK10X40D
Manufacturer	Toshiba ↗ Semiconductor
File Size	250.01 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK10X40D-ToshibaSemiconductor.pdf

(1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 5.0 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 400 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10X40D 1: Gate (G) 2: N. C. 3: Source (S) 4: Drain (D) (Heatsink) TFP 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 400 V.

📁 TK10X40D Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 6, 2014 |