Datasheet Specifications
- Part number
- TK10J80E
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 226.43 KB
- Datasheet
- TK10J80E-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS (π-MOS) TK10J80E 1.Applications * Switching Voltage Regulators 2..
Features
* (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10J80E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial proTK10J80E Distributors
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