TK10A60E - MOSFETs

Name: TK10A60E
SKU: TK10A60E-839544

Toshiba Semiconductor

The TK10A60E by Toshiba Semiconductor is a MOSFETs. Below is the official datasheet preview.

Datasheet Details

Part number	TK10A60E
Manufacturer	Toshiba Semiconductor
File Size	234.76 KB
Description	MOSFETs
Datasheet	TK10A60E-ToshibaSemiconductor.pdf
Additional preview pages of the TK10A60E datasheet.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.2.0 TK10A60E 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-.

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Published: Sep 19, 2014 |