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TJ20A10M3 Field Effect Transistor

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Description

TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications * Low drain-source .

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Applications

* Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ. )
* High forward transfer admittance: |Yfs| = 50 S (typ. )
* Low leakage current: IDSS =
* 10 μA (max) (VDS =
* 100 V)
* Enhancement-model: Vth =
* 2.0 to
* 4.0 V (VDS =
* 10 V,

TJ20A10M3 Distributors

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TJ20A10M3 Field Effect Transistor Toshiba Semiconductor
Toshiba Semiconductor TJ20A10M3-like datasheet