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TJ200F04M3L - Silicon P-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.45 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ200F04M3L TO-220SM(W) 1: Gate 2: Drain (heatsink) 3: Source ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2020-06-24 Rev.8.0 TJ200F04M3L 4. Absolute Maximum Ratings (Note) (Ta.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS) TJ200F04M3L 1. Applications • Automotive • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.45 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ200F04M3L TO-220SM(W) 1: Gate 2: Drain (heatsink) 3: Source ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2020-06-24 Rev.8.0 TJ200F04M3L 4.
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