TJ200F04M3L Silicon P-Channel MOSFET

Toshiba

Description

MOSFETs Silicon P-Channel MOS (U-MOS) TJ200F04M3L 1.Applications * Automotive * DC-DC Converters * Motor Drivers 2..

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Datasheet Specifications

Part number: TJ200F04M3L
Manufacturer: Toshiba ↗
File Size: 334.14 KB
Datasheet: TJ200F04M3L-Toshiba.pdf
Description: Silicon P-Channel MOSFET

Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.45 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ200F04M3L TO-220SM(W) 1: Gate 2: Dr

Applications

* Automotive
* DC-DC Converters

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TJ200F04M3L Silicon P-Channel MOSFET Toshiba

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