Datasheet Specifications
- Part number
- TH50VSF3680
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 585.37 KB
- Datasheet
- TH50VSF3680_ToshibaSemiconductor.pdf
- Description
- SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
Description
TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE .
Features
* Power supply voltage VCCs = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) Block erase architecture for flaTH50VSF3680 Distributors
📁 Related Datasheet
📌 All Tags