TH50VSF3582AASB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

Description

TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE .
The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory.

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Datasheet Specifications

Part number: TH50VSF3582AASB
Manufacturer: Toshiba ↗ Semiconductor
File Size: 611.07 KB
Datasheet: TH50VSF3582AASB_ToshibaSemiconductor.pdf
Description: MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

Features

* Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www. DataSheet4U. com
* Data retention supply voltage VCCs = 1.5 V~3.3 V
* Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH)
* Block eras

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TH50VSF3582AASB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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