TC58V64ADC - 64M-Bit CMOS NAND EPROM

Product Overview

Toshiba Semiconductor

Datasheet Details

Part number	TC58V64ADC
Manufacturer	Toshiba Semiconductor
File Size	715.29 KB
Description	64M-Bit CMOS NAND EPROM
Datasheet	TC58V64ADC Datasheet
Additional preview pages of the TC58V64ADC datasheet.

Product details

Description

2 TM ) The TC58V64A is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 16 pages × 1024 blocks.The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.The Erase operation is implemented in a single block unit (8 Kbytes + 512 bytes: 528 bytes × 16 pages).The TC58V64A is a serial-type memory de

Features

Organization Memory cell array 528 × 16K × 8 Register 528 × 8 Page size 528 bytes Block size (8K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and Data Format Specification issued by the SSFDC Forum.
Power supply VCC = 3.3 V ± 0.3 V Access time Cell array-register 25 µs max Serial Read cycle 50 ns min Operating current.

📁 Similar Datasheet

TC582562AXB - CMOS NAND EPROM (Toshiba)
TC58256AFTI - CMOS NAND EPROM (Toshiba)
TC58256FT - CMOS NAND EPROM (Toshiba)
TC58256FTI - CMOS NAND EPROM (Toshiba)
TC58257AF - (TC58257AP/AF) Erasable and Programmable ROM (Toshiba)
TC58257AP - (TC58257AP/AF) Erasable and Programmable ROM (Toshiba)
TC58BVG0S3HBAI4 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)
TC58BVG0S3HBAI6 - 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)

Other Datasheets by Toshiba Semiconductor

TC58V64AFT - 64M-Bit CMOS NAND EPROM
TC58V64AFTI - 64M-Bit CMOS NAND EPROM
TC58V64BDC - 64M-Bit CMOS NAND EPROM
TC58V64BFT - 64M-Bit CMOS NAND EPROM
TC58V64DC - 16M-Bit CMOS NAND EPROM
TC58V64FT - 64M-Bit CMOS NAND EPROM

Published: Apr 6, 2006 |