TC58BVG0S3HBAI4 Datasheet (Toshiba) - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

TC58BVG0S3HBAI4, 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

The TC58BVG0S3HBAI4 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.

The device has a 2112-byte static register which allows program and read data to be transferred between

TC58BVG0S3HBAI4 Features

* Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read

* Mode control Serial input/output Command contro