SSM6P26TU Datasheet - Toshiba Semiconductor

SSM6P26TU, P-Channel MOSFET

SSM6P26TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6P26TU High Speed Switching

Applications

* Unit: mm
* Optimum for high-density mounting in small packages Low on-resistance: Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V) 0.65 0.65 2.0±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Ron = 980mΩ (max) (@VGS = -1.8 V) 1.3±0.1 1 2 3 6 5 4 (Q1, Q2 Common) Absolute M

SSM6P26TU_ToshibaSemiconductor.pdf