SSM6P25TU Datasheet - Toshiba Semiconductor

SSM6P25TU, P-Channel MOSFET

SSM6P25TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6P25TU High Speed Switching

Applications

* Unit: mm
* Optimum for high-density mounting in small packages Low on-resistance: Ron = 260mΩ (max) (@VGS = -4 V) Ron = 430mΩ (max) (@VGS = -2.5 V) 0.65 0.65 2.0±0.1 1.3±0.1 1 2 3 Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel

SSM6P25TU_ToshibaSemiconductor.pdf