SSM6N7002FU Datasheet - Toshiba Semiconductor

SSM6N7002FU Silicon N-Channel MOSFET

SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Small package Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGSS ± 20 V Drain current DC Pulse ID.

SSM6N7002FU Datasheet (209.98 KB)