SSM6N7002BFE Datasheet - Toshiba Semiconductor

SSM6N7002BFE N-Channel MOSFET

SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm 1.6±0.05 Small package Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 Ω (max) (@VGS = 5 V) : RDS(ON) = 2.1 Ω (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit 1.6±0.05 1.0±0.05 0.5 0.5 1.2±0.05 1 6 2 5 3 4 0.2±0.0.

SSM6N7002BFE Datasheet (195.70 KB)