SSM6K25FE Datasheet - Toshiba Semiconductor

SSM6K25FE, Silicon N-Channel MOSFET

SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching

Applications

* Optimum for high-density mounting in small packages
* Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 1.6±0.05 1.2±0.05 0.2±0.05 1 6 2 5 1.6±0.05 1.0±0.05 0.5

SSM6K25FE_ToshibaSemiconductor.pdf