SSM6K211FE Datasheet (Toshiba Semiconductor)

SSM6K211FE, Silicon N-Channel MOSFET

SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ) SSM6K211FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 1.5-V drive Low ON-resistance: Ron = 118 mΩ (max) (@VGS = 1.5 V) Ron = 82 mΩ (max) (@VGS = 1.8 V) Ron = 59 mΩ (max) (@VGS = 2.5 V) Ron = 47 mΩ (max) (@VGS = 4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS