SSM6G18NU - Silicon Epitaxial Schottky Barrier Diode

Toshiba Semiconductor

Datasheet Details

Part number	SSM6G18NU
Manufacturer	Toshiba ↗ Semiconductor
File Size	457.28 KB
Description	Silicon Epitaxial Schottky Barrier Diode
Datasheet	SSM6G18NU-ToshibaSemiconductor.pdf

(1) Combined a P-channel MOSFET and a Schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.8 V) RDS(ON) = 143 mΩ (max) (VGS = -2.5 V) RDS(ON) = 112 mΩ (max) (VGS = -4.5 V) 2.2. Diode Features (1) Low forward voltage: VF = 0.48 V (typ. ) (@IF = 1000 mA) 3. Packaging and Internal Circuit UDFN6 1.Anode 2.N. C. 3.Drain 4.Source 5.Gate 6.Cathode ©2021-2022 1 Toshiba Electronic Devices.

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Published: Sep 19, 2014 |