SSM6E03TU Datasheet - Toshiba Semiconductor

SSM6E03TU, Silicon P-Channel MOSFET

SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch

Features

* low RDS (ON) and low-voltage operation 1 2 3 6 5 4 Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 1) Rating
* 20 ±8 -1.8 -3.6 Unit V V A 0.7±0.05 Q2 Absolute Maximum Ratings (Ta = 25°C)

SSM6E03TU-ToshibaSemiconductor.pdf