SSM3K12T Datasheet (Toshiba Semiconductor) - CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category

SSM3K12T, CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category

SSM3K12T CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category SSM3K12T DC-DC Converter High Speed Switching Applications Small Package Low ON-resistance High speed Unit: mm : Ron = 95 mΩ (max) (@VGS = 10 V) : Ron = 145 mΩ (max) (@VGS = 4.5 V) : ton = 21 ns : toff = 16 ns Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Tstg Rating 30 ±20 3