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SSM3K123TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K123TU
Power Management Switch Applications
High-Speed Switching Applications
• 1.5 V drive
• Low ON-resistance:
Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V) Ron = 32 mΩ (max) (@VGS = 2.5 V) Ron = 28 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
Symbol
VDSS VGSS
ID IDP PD (Note 1) PD (Note 2) Tch Tstg
Rating
20 ± 10 4.2 8.4 800 500 150 −55~150
Unit V V A
mW °C °C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.g.
SSM3K123TU Datasheet
