SSM3K123TU Datasheet (Toshiba Semiconductor)

SSM3K123TU, Silicon N-Channel MOSFET

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive Low ON-resistance: Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V) Ron = 32 mΩ (max) (@VGS = 2.5 V) Ron = 28 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel tem