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MT3S36T - TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

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Toshiba Semiconductor

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MT3S36T TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE by Toshiba Semiconductor - Datasheet Preview — Datasheet preview – MT3S36T

Datasheet Details

Part number	MT3S36T
Manufacturer	Toshiba Semiconductor
File Size	148.17 KB
Description	TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
Datasheet	MT3S36T Datasheet
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Features

Low Noise Figure :NF=1.3dB (@f=2GHz) High Gain:|S21e| =12.5dB (@f=2GHz) 2 Marking 3 Q3 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 36 18 100 150.
55~150 Unit V V V mA mA mW °C °C JEITA.

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Published: Nov 9, 2006 |