MT3S19R - Silicon NPN Epitaxial Planar Type Transistor

Product Overview

Toshiba Semiconductor

Part number	MT3S19R
Manufacturer	Toshiba Semiconductor
File Size	155.69 KB
Description	Silicon NPN Epitaxial Planar Type Transistor
Datasheet	MT3S19R Datasheet
Additional preview pages of the MT3S19R datasheet.

Low Noise Figure:NF=1.5dB(Typ. ) (@ f=1GHz).
High Gain:|S21e|2=13dB(Typ. ) (@ f=1GHz) Marking 3 1.8±0.1 0.05　M A 0.42+-00..0058 3 Unit: mm 0.17 +0.08 -0.07 2.4±0.1 1 0.95 2 0.95 2.9±0.2 A 0.8 -+00..0058 T6 12 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature r.

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Published: Jun 14, 2016 |