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MT3S19TU - Silicon NPN Epitaxial Planar Type Transistor

Features

  • Low-Noise Figure : NF = 1.5 dB (typ. ) (@ f = 1 GHz).
  • High Gain : |S21e|2=13 dB (typ. ) (@ f = 1 GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 23 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 T6 1.BASE 2.

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Datasheet Details

Part number MT3S19TU
Manufacturer Toshiba
File Size 156.62 KB
Description Silicon NPN Epitaxial Planar Type Transistor
Datasheet download datasheet MT3S19TU Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz) • High Gain : |S21e|2=13 dB (typ.) (@ f = 1 GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 23 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 T6 1.BASE 2.EMITTER 3.COLLECTOR 12 Absolute Maximum Ratings (Ta = 25°C) UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight: 6.6 mg (typ.
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