MT3S12T Datasheet - Toshiba Semiconductor

MT3S12T Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12T VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications Superior performance in oscillator applications. Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 4.5 dB (f = 2 GHz) MT3S12T Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction.

MT3S12T Datasheet (128.18 KB)

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Datasheet Details

Part number:

MT3S12T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

128.18 KB

Description:

Silicon npn epitaxial planar type transistor.

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MT3S12T Silicon NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

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