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K4012 2SK4012

K4012 Description

2SK4012 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm .

K4012 Applications

* Unit: mm z Low drain
* source ON-resistance : RDS (ON) = 0.33 Ω (typ. ) z High forward transfer admittance : |Yfs| = 8.5 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25

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2SK4012 Toshiba Semiconductor
Toshiba Semiconductor K4012-like datasheet