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K4021 - 2SK4021

Key Features

  • or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, device.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK4021 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4021 Switching Regulators and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance: |Yfs| = 4.5 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) 6.5 ± 0.2 5.2 ± 0.2 0.9 1.6 5.5 ± 0.2 1.5 ± 0.2 Unit: mm 0.6 MAX. 1.1 ± 0.2 0.6 MAX. 4.1 ± 0.2 5.7 Characteristic Symbol Rating Unit 2.3 2.3 2.3 ± 0.