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K2662 2SK2662

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Description

2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2662 DC *DC Converter, Relay Drive and Motor Drive Appl.

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* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 1.35 Ω (typ. ) z High forward transfer admittance : |Yfs| = 4.0 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25

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K2662 2SK2662 Toshiba Semiconductor
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