K2607 Silicon N-Channel FET

Toshiba Semiconductor

K2607 Description

2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2607 Chopper Regulator, DC *DC Converter and Moter Dr.

K2607 Applications

* Unit: mm z Low drain
* source ON-resistance : RDS (ON) = 1.0 Ω (typ. ) z High forward transfer admittance : |Yfs|= 7.0 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Char

📥 Download Datasheet

K2607 Datasheet Preview — Preview of K2607 PDF

Datasheet Details

Part number: K2607
Manufacturer: Toshiba ↗ Semiconductor
File Size: 444.44 KB
Datasheet: K2607-ToshibaSemiconductor.pdf
Description: Silicon N-Channel FET

📁 Related Datasheet

K2600G - Sidac (JIEJIE)
K2600S - Sidac (JIEJIE)
K2611B - Silicon N-Channel MOSFET (Winsemi)
K2614 - 2SK2614 (Toshiba)
K2617ALS - 2SK2617ALS (Sanyo Semicon Device)
K2623TC480 - Medium Voltage Thyristor (IXYS)
K2623TC500 - Medium Voltage Thyristor (IXYS)
K2623TC520 - Medium Voltage Thyristor (IXYS)

📌 All Tags

Silicon N-Channel FET Toshiba Semiconductor

Toshiba Semiconductor K2607-like datasheet

K2601 - 2SK2601
K2604 - 2SK2604
K2605 - 2SK2605
K2608 - 2SK2608
K2610 - 2SK2610
K2611 - 2SK2611