GT25G101 Datasheet (Toshiba Semiconductor)

GT25G101, Silicon N-Channel IGBT

GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage l Enhancement Mode l 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC 1ms Ta=25°C Tc=25°C SYMBOL VCES VGES IC ICP PC