GT2530 - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GT2530 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GT2530

Datasheet Details

Part number	GT2530
Manufacturer	GTM
File Size	416.54 KB
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GT2530 Datasheet
Additional preview pages of the GT2530 datasheet.

Product details

Description

N-CH BVDSS 30V N-CH RDS(ON) 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SOT-26 package is universally used for all commercial-industrial surface mount applications.

Features

Low Gate Change.
Low On-resistance.
RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Rating.

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Published: Sep 13, 2007 |