GT15Q311 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Motor Control Applications Unit:.

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Datasheet Specifications

Part number: GT15Q311
Manufacturer: Toshiba ↗ Semiconductor
File Size: 167.16 KB
Datasheet: GT15Q311-ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Motor Control Applications Unit: mm
* The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gat

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GT15Q311 Silicon N-Channel IGBT Toshiba Semiconductor

Toshiba Semiconductor GT15Q311-like datasheet