GT15Q102 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm The 3rd Generation Enha.

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Datasheet Specifications

Part number: GT15Q102
Manufacturer: Toshiba ↗ Semiconductor
File Size: 152.24 KB
Datasheet: GT15Q102_ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
* Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Ju

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GT15Q102 Silicon N-Channel IGBT Toshiba Semiconductor

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