C5030 2SC5030

Toshiba Semiconductor

Description

2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm * <.

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Datasheet Specifications

Part number: C5030
Manufacturer: Toshiba ↗ Semiconductor
File Size: 232.51 KB
Datasheet: C5030-ToshibaSemiconductor.pdf
Description: 2SC5030

Applications

* Medium Power Amplifier Applications Unit: mm
* High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC =

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C5030 2SC5030 Toshiba Semiconductor

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