Datasheet Specifications
- Part number
- C3112
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 487.09 KB
- Datasheet
- C3112_ToshibaSemiconductor.pdf
- Description
- 2SC3112
Description
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications * *
Applications
* High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current BaseC3112 Distributors
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