C3112 Datasheet - Toshiba Semiconductor

C3112 2SC3112

2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperatur.

C3112_ToshibaSemiconductor.pdf