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C3117 - 2SC3117

Features

  • High breakdown voltage.
  • Large current capacity.
  • Adoption of MBIT process. 1.6 0.8 0.8 0.6 3.0 1.5 3.0 7.0 11.0 15.5 0.5 ( ) : 2SA1249 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.2 1 2 3 1 : Emitter 2 : Co.

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Other Datasheets by SANYO (now Panasonic)

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C3114 2SC3114
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number:ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses · Color TV sound output, converters, inverters. Package Dimensions unit:mm 2009B [2SA1249/2SC3117] 8.0 4.0 2.7 Features · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. 1.6 0.8 0.8 0.6 3.0 1.5 3.0 7.0 11.0 15.5 0.5 ( ) : 2SA1249 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.
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