3SK291 Datasheet (Toshiba Semiconductor) - Silicon N-Channel Dual Gate MOS Type FET

3SK291, Silicon N-Channel Dual Gate MOS Type FET

3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance Low reverse transfer capacitance: Crss = 0.016 pF (typ.) Low noise figure: NF = 1.5dB (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate 1-source voltage VG1S ±8 V Gate 2-source voltage VG2S ±8 V Drain current ID 30 mA