3SK298 - Silicon N-Channel Dual Gate MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	3SK298
Manufacturer	Hitachi Semiconductor
File Size	54.85 KB
Description	Silicon N-Channel Dual Gate MOS FET
Datasheet	3SK298_HitachiSemiconductor.pdf

Low noise figure. NF = 1.0 dB typ. at f = 200 MHz.
Capable of low voltage operation Outline CMPAK.
4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150.
55 to +150 Unit V V V mA mW °C °C Attention: Th.

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Published: Mar 30, 2005 |