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2SK417 - Silicon N-Channel MOSFET

Toshiba Semiconductor

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Datasheet Details

Part number	2SK417
Manufacturer	Toshiba Semiconductor
File Size	44.13 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK417_ToshibaSemiconductor.pdf

2SK417 Product details

Features

. Low Drain-Source ON Resistance : RdS(ON) = 0.1Q (Typ. ) . High Forward Transfer Admittance : lYf s l=4S (Typ. ) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V IDS S= 1mA (Max. ) @ VDS =60V . Enhancement-Mode : V t h=l.
5 ~ 3. 5V @ lD=lmA.

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Published: Sep 5, 2007 |