2SK3906 Datasheet (Toshiba Semiconductor)

2SK3906, N-Channel MOSFET

www.DataSheet4U.com 2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI) 2SK3906 Switching Regulator Applications Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 400 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.27 Ω (typ.) High forward transfer admittance: |Yfs| = 15S (typ.) Low leakage current: IDSS = 500 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10

2SK3906 Features

* intended Use includes, without limitation, equipment used in nuclear facilities, eq