2SK30ATM N-Channel MOSFET

Toshiba Semiconductor

Description

2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Inpu.

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Datasheet Specifications

Part number: 2SK30ATM
Manufacturer: Toshiba ↗ Semiconductor
File Size: 292.43 KB
Datasheet: 2SK30ATM_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* Unit: mm
* High breakdown voltage: VGDS =
* 50 V
* High input impedance: IGSS =
* 1 nA (max) (VGS =
* 30 V)
* Low noise: NF = 0.5 dB (typ. ) (VDS = 15 V, VGS = 0, RG = 100 kΩ, f = 120 Hz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra

2SK30ATM Distributors

📁 Related Datasheet

2SK30A 2SK300 2SK3000 2SK3001 2SK3003 2SK3004

📌 All Tags

2SK30ATM N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SK30ATM-like datasheet