2SK3001 - GaAs HEMT Low Noise Amplifier

Hitachi Semiconductor

Datasheet Details

Part number	2SK3001
Manufacturer	Hitachi Semiconductor
File Size	145.04 KB
Description	GaAs HEMT Low Noise Amplifier
Datasheet	2SK3001_HitachiSemiconductor.pdf

Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz).
High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz).
Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor.

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Published: Nov 9, 2008 |