Datasheet Specifications
- Part number
- 2SK3077
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 239.61 KB
- Datasheet
- 2SK3077_ToshibaSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
www.DataSheet4U.com 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l .
Applications
* (GSM) Unit: mm l Output Power l Gain l Drain Efficiency : PO = 15.0 dBmW (Min. ) : GP = 15.0 dB (Min. ) : ηD = 20% (Typ. ) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDSS VGSS2SK3077 Distributors
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