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2SD1631 Datasheet - Toshiba Semiconductor

2SD1631 Silicon NPN Epitaxial Type Transistor

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector cu.

2SD1631 Datasheet (116.58 KB)

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Datasheet Details

Part number:

2SD1631

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

116.58 KB

Description:

Silicon npn epitaxial type transistor.

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2SD1631 Silicon NPN Epitaxial Type Transistor Toshiba Semiconductor

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