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2SC3710A Datasheet - Toshiba Semiconductor

2SC3710A Silicon NPN Transistor

www.DataSheet4U.com 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1452A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction tem.

2SC3710A Datasheet (170.23 KB)

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Datasheet Details

Part number:

2SC3710A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

170.23 KB

Description:

Silicon npn transistor.

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2SC3710A Silicon NPN Transistor Toshiba Semiconductor

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