2SC3474 Datasheet (Toshiba Semiconductor) - Silicon NPN Epitaxial Type TRANSISTOR

2SC3474, Silicon NPN Epitaxial Type TRANSISTOR

2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm High DC current gain: hFE = 500 (min) (IC = 400 mA) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature