Datasheet4U Logo Datasheet4U.com

2SA1933 Datasheet - Toshiba Semiconductor

2SA1933 Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 High-Current Switching Applications Industrial Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 2 A) High-speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC5175 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cur.

2SA1933 Datasheet (125.85 KB)

Preview of 2SA1933 PDF
2SA1933 Datasheet Preview Page 2 2SA1933 Datasheet Preview Page 3

Datasheet Details

Part number:

2SA1933

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

125.85 KB

Description:

Silicon pnp epitaxial type transistor.

📁 Related Datasheet

2SA1930 PNP Transistor (Toshiba Semiconductor)

2SA1930 Silicon PNP Power Transistor (Inchange Semiconductor)

2SA1930 Silicon PNP transistor (BLUE ROCKET ELECTRONICS)

2SA1930 SILICON PNP TRANSISTOR (LZG)

2SA1930I Silicon PNP transistor (BLUE ROCKET ELECTRONICS)

2SA1930S Silicon PNP transistor (BLUE ROCKET ELECTRONICS)

2SA1931 PNP Transistor (INCHANGE)

2SA1931 Silicon PNP Transistor (Toshiba)

TAGS

2SA1933 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor

2SA1933 Distributor