1SS401 Datasheet - Toshiba Semiconductor

1SS401, Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 High Speed Switching Applications 1SS401 Unit: mm z Low forward voltage z Low reverse c.

Applications

* 1SS401 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.38 V (typ. ) : IR = 50μA (max) : CT = 46 pF (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward c

1SS401_ToshibaSemiconductor.pdf