1SS154 Datasheet - Toshiba Semiconductor

1SS154, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 1SS154 UHF~S Band Mixer/Detector Applications * Small package.Absolute Maxim.

Applications

* Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 6 V IF 30 mA Tj 125 °C Tstg
* 30 to 125 °C Note: Using continuously under heavy loads (e. g. th

1SS154_ToshibaSemiconductor.pdf